U.S.-based- Raytheon Technologies has reportedly announced a partnership with GlobalFoundries (GF), a complete-service semiconductor company, with an aim to improve 5G connectivity using GaN semiconductor.
For starters, GaN (Gallium nitride) is steadily being preferred for developing high-performance semiconductors that can resist high voltage as well as fast switching speeds. It is robust, thermally stable and has showcased favorable 5G cellular base station applications owing to its voltage breakdown limits and high power density.
Sources close to the news claim that both Raytheon and GF aim at developing and commercializing a robust gallium nitride on silicon semiconductor solution to meet the emerging 5G and 6G radio frequency millimeter-wave operating frequency standards.
Seemingly, GF is slated to develop the new semiconductor technology at its Fab 9 unit in Vermont, with Raytheon Technologies offering its native gallium nitride on silicon solution.
According to Tom Caulfield, CEO of GF, the alliance will enable AI-powered phones, driverless vehicles, smart grid as well as government’s access data and networks that are vital to national security.
The novel GaN solution by Raytheon and GF will together help users to increase their RF efficiency and performance along with optimizing the cost of operation and production.
Mark Russell, Chief Technology Officer at Raytheon Technologies, mentioned that the company has emerged as one of the leaders advancing RF gallium arsenide solutions that can be widely used across the mobile and wireless industry, and is actively working towards advancing gallium nitride technology for application in advanced military systems.
Mark added that the alliance with GlobalFoundries showcases the common goal of the companies to deliver high-performance communication solutions that are available at a cost-effective rate to the customers and proves how investments in advanced defense systems can enhance lives.